Silicon carbide biotechnology : a biocompatible semiconductor for advanced biomedical devices and applications / edited by Stephen E. Saddow.

Silicon Carbide Biotechnology: A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications, Second Edition, provides the latest information on this wide-band-gap semiconductor material that the body does not reject as a foreign (i.e., not organic) material and its potential to further advance biomedical applications. SiC devices offer high power densities and low energy losses, enabling lighter, more compact, and higher efficiency products for biocompatible and long-term in vivo applications, including heart stent coatings, bone implant scaffolds, neurological implants and sensors, glucose sensors, brain-machine-interface devices, smart bone implants, and organ implants. This book provides the materials and biomedical engineering communities with a seminal reference book on SiC for developing technology, and is a resource for practitioners eager to identify and implement advanced engineering solutions to their everyday medical problems for which they currently lack long-term, cost-effective solutions.

Includes index.

Online resource; title from PDF title page (ScienceDirect, viewed March 16, 2016).

Includes bibliographical references and index.

Cover; Title Page; Copyright Page; In Memoriam; Dedication; Contents; List of contributors; Preface to Second Edition; Acknowledgments; Chapter 1 -- Silicon Carbide Materials for Biomedical Applications; 1.1 -- Preamble; 1.2 -- Introduction to the second edition; 1.3 -- Summary to the second edition; 1.4 -- Introduction to the first edition; 1.5 -- Silicon carbide -- materials overview; 1.6 -- Silicon carbide material growth and processing; 1.6.1 -- Bulk Growth; 1.6.2 -- Thin-Film Growth; 1.6.3 -- Amorphous Silicon Carbide Coatings; 1.6.4 -- SiC Micromachining

1.7 -- Silicon carbide as a biomedical material1.8 -- Summary to the first edition; Acknowledgments; References; Chapter 2 -- Cytotoxicity of 3C-SiC Investigated Through Strict Adherence to ISO 10993; 2.1 -- Introduction; 2.2 -- In vitro biomedical testing methods for cytotoxicity; 2.2.1 -- International Standards Organization (ISO) 10993; 2.2.2 -- ISO 10993-12 Control Selection and Material Preparation; 2.2.3 -- L929 Murine Fibroblastoma Cell Culture Protocol; 2.2.4 -- ISO 10993-5 Extract and Direct Contact Methods; 2.2.5 -- Results and Discussions; 2.2.6 -- A Need for More Efficient Methodologies

2.3 -- Improved ISO 10993: the BAMBI method2.3.1 -- BAMBI Methodology; 2.3.2 -- BAMBI Method Results; 2.4 -- 3C-SiC in vitro evaluation; 2.4.1 -- The Advantages of 3C-SiC for Biomedical Devices; 2.4.2 -- Materials and Methods; 2.4.3 -- The BAMBI Method Cytotoxicity Testing Evaluation of 3C-SiC; 2.5 -- Summary and the future of 3C-SiC biomedical testing; Acknowledgments; References; Chapter 3 -- Study of the Hemocompatibility of 3C-SiC and a-SiC Films Using ISO 10993-4; 3.1 -- Introduction; 3.2 -- In vitro biomedical testing methods for cytotoxicity; 3.2.1 -- Testing Materials; 3.2.1.1 -- (100) Silicon

3.2.1.2 -- Cubic Silicon Carbide3.2.1.3 -- Amorphous Silicon Carbide; 3.2.2 -- In vitro BAMBI Cytotoxicity Assay for a-SiC; 3.3 -- In vitro assay to assess hemocompatibility of SiC; 3.3.1 -- Hemocompatibility; 3.3.2 -- ISO 10993-4 Hemocompatibility Evaluation of SiC; 3.3.2.1 -- Chandler's Loop; 3.3.2.2 -- Platelet-Rich Plasma Preparation; 3.3.3 -- Static Hemocompatibility of SiC; 3.3.4 -- Dynamic Hemocompatibility of SiC; 3.4 -- Summary; Acknowledgments; References; Chapter 4 -- Graphene Functionalization for Biosensor Applications; 4.1 -- Introduction; 4.2 -- Production of graphene

4.2.1 -- Mechanical Exfoliation of Graphite4.2.2 -- Chemical Exfoliation; 4.2.3 -- Supporting Substrates; 4.2.4 -- Chemical Vapor Deposition; 4.2.5 -- Metal Substrates; 4.2.5.1 -- Growth on Copper; 4.2.5.2 -- Roll-to-Roll Production; 4.2.5.3 -- Growth on Nickel; 4.2.6 -- CVD Growth on SiC; 4.2.7 -- Epitaxial Growth on Silicon Carbide; 4.2.7.1 -- Si- and C-Face Growth; 4.2.7.2 -- Related Growth Techniques on SiC; 4.3 -- Graphene characterization methods; 4.3.1 -- Raman Spectroscopy; 4.3.2 -- XPS; 4.3.3 -- Electrical Characterization; 4.3.4 -- Electrochemical Characterization (Electrochemistry Techniques)

4.3.4.1 -- Amperometry